规格书 |
NTD3055L104 |
文档 |
Wafer Probe Measurement 16/Oct/2013 TMOS7 Wafer Fab Expansion 04/Dec/2013 |
Rohs | Lead free / RoHS Compliant |
标准包装 | 75 |
FET 型 | MOSFET N-Channel, Metal Oxide |
FET特点 | Logic Level Gate |
漏极至源极电压(VDSS) | 60V |
电流-连续漏极(编号)@ 25°C | 12A |
Rds(最大)@ ID,VGS | 104 mOhm @ 6A, 5V |
VGS(TH)(最大)@ Id | 2V @ 250µA |
栅极电荷(Qg)@ VGS | 20nC @ 5V |
输入电容(Ciss)@ Vds的 | 440pF @ 25V |
功率 - 最大 | 1.5W |
安装类型 | Through Hole |
包/盒 | TO-251-3 Short Leads, IPak, TO-251AA |
供应商器件封装 | I-Pak |
包装材料 | Tube |
associated | 80-4-5 |
NTD3055L104-1G也可以通过以下分类找到
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